EPC Partners with Freebird Semiconductor for Development of Radiation Hardened Gallium Nitride Power Conversion Systems for Satellite and Harsh Environment Applications
Efficient Power Conversion (EPC) and Freebird Semiconductor have entered into an agreement whereby Freebird will develop products for use in high reliability space and harsh environment applications based upon eGaN® power transistors and integrated circuits.
EL SEGUNDO, CA — April 2016 — Efficient Power Conversion Corporation (EPC), the leading provider of enhancement-mode gallium nitride power transistors, announces the signing of an agreement with Freebird Semiconductor Corporation, North Andover, Massachusetts to develop products for use in high reliability, space, and harsh environment applications based upon EPC’s eGaN® technology.
Dr. Simon Wainwright, President and CEO of Freebird Semiconductor Corporation stated that, “Freebird is focused upon developing components and circuits to be used in highly efficient, radiation hardened power conversion systems for use in harsh environment and space applications.” He further commented that, “GaN technology will permit space applications to utilize the latest in high performance semiconductor material, whereas when using silicon-based components in these applications produces systems that are behind the latest performance curves.”
“The superior conductivity and switching characteristics of GaN devices allow designers to greatly reduce system power losses, size, and weight. Given GaN’s superior state-of-the-art performance, coupled with its demonstrated ability to operate reliably under harsh environmental conditions and high radiation, GaN devices have a very bright future in space applications. We are excited to be supporting Freebird in the development of their GaN-based products,” noted Dr. Alex Lidow, EPC CEO and Co-founder.
In addition to collaborating on power systems product development, the two companies will be active in publishing the results of their work and giving joint presentations at professional conferences. It is important that GaN’s superior performance and design conditions be shared with the rest of the industry to further rapid adoption of this emerging technology.
About Freebird Semiconductor
Freebird Semiconductor is a (USA) domestic manufacturer of high reliability gallium nitride (GaN) High Electron Mobility Transistor (HEMT) products offering advanced power semiconductor technologies to the commercial space-flight high reliability community.
EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.