Freebird Semiconductor:
(r)evolutionary High-Reliability
GaN Technology

High-Reliability GaN Technology

High Reliability Enhancement Mode Gallium Nitride (eGaN) Power Switch High Electron Mobility Transistor (HEMT)

• Exceptionally High Electron Mobility
• Higher Efficiencies
• Higher Power Densities
• Reduced Size & Mass
• Hermetic and Near Hermetic Solutions



Guaranteed Space-Borne Radiation Hardness Assurance for Total Ionizing Dose (TID), Low Dose Rate Sensitivity and Single Event Effects