Freebird Semiconductor:
(r)evolutionary High-Reliability
GaN Technology

Visit Us at CMSE — May 9, 2018, Los Angeles, CA

Learn more at our presentation on:
“High Reliability Rad Hard E-Mode Gallium Nitride HEMT GaN Power Technologies & Packaging for Space”

High-Reliability GaN Technology

High Reliability Enhancement Mode Gallium Nitride (eGaN) Power Switch High Electron Mobility Transistor (HEMT)

• Exceptionally High Electron Mobility
• Higher Efficiencies
• Higher Power Densities
• Reduced Size & Mass
• Hermetic and Near Hermetic Solutions

 

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Guaranteed Space-Borne Radiation Hardness Assurance for Total Ionizing Dose (TID), Low Dose Rate Sensitivity and Single Event Effects